| PART |
Description |
Maker |
| DS1870E-010 |
LDMOS RF Power-Amplifier Bias Controller
|
Maxim Integrated Products, Inc.
|
| MHVIC2115NR2 |
2170 MHz, 26 V, 23/34 dBm W??DMA RF LDMOS Wideband Integrated Power Amplifier
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MW6IC1940NBR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
http://
|
| MW6IC1940GNBR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MW7IC915NT1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| PTMA080304M |
Dual Wideband RF LDMOS Power Amplifier 30 W, 700-1000 MHz
|
Infineon Technologies AG
|
| PTMA080152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 ?1000 MHz
|
Infineon Technologies AG
|
| PTMA180402M |
Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ?2100 MHz
|
Infineon Technologies AG
|
